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Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing. .
| dc.rights.license | Autres | en_US |
| dc.contributor.author | Amor, Sedki | |
| dc.contributor.author | Kilchytska, Valeriya | |
| dc.contributor.author | Tounsi, Fares | |
| dc.contributor.author | André, Nicolas | |
| dc.contributor.author | Machhout, M. | |
| dc.contributor.author | FRANCIS, Laurent | |
| dc.contributor.author | Flandre, Denis | |
| dc.date.accessioned | 2023-11-14T19:31:03Z | |
| dc.date.available | 2023-11-14T19:31:03Z | |
| dc.date.issued | 2022 | |
| dc.identifier.uri | https://luck.synhera.be/handle/123456789/2527 | |
| dc.publisher | Solid-State Electronics, p. 20 | en_US |
| dc.title | Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing. . | en_US |
| dc.type | Article Scientifique | en_US |
| synhera.stakeholders.fund | Autres | en_US |
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