| dc.rights.license | CC0 | en_US |
| dc.contributor.author | Scheen, Gilles | |
| dc.contributor.author | Tuyaerts, Romain | |
| dc.contributor.author | Cardinael, Pieter | |
| dc.contributor.author | Ekoga, Enriqué | |
| dc.contributor.author | Aouadi, Khaled | |
| dc.contributor.author | Pavageau, Christophe | |
| dc.contributor.author | Rassekh, Amin | |
| dc.contributor.author | Nabet, Massinissa | |
| dc.contributor.author | Yadav, Sachin | |
| dc.contributor.author | Raskin, Jean-Pierre | |
| dc.contributor.author | Parvais, Bertrand | |
| dc.contributor.author | Emam, Mostafa | |
| dc.date.accessioned | 2025-01-23T07:24:12Z | |
| dc.date.available | 2025-01-23T07:24:12Z | |
| dc.date.issued | 2023-09-17 | |
| dc.identifier.uri | https://luck.synhera.be/handle/123456789/2987 | |
| dc.description.abstract | Proceedings European microwave week 23 | en_US |
| dc.description.abstracten | Gallium nitride (GaN) is a promising
semiconductor for RF and high-power applications. However, its
large-scale industrialization is hindered by several challenges,
primarily the lack of cost-effective, high-performance handle
substrates. Sapphire and SiC present high performances, but their
use in electronic applications is limited due to their high cost. GaNon-Si substrates are more affordable but suffer from high
substrate-induced RF losses. We introduce an innovative method
to mitigate the substrate losses. Porous silicon is known for decades
for its high RF performance but its integration is challenging. We
performed porosification of the handle silicon substrate after the
fabrication of the RF devices, from the backside, preserving the
high quality of the GaN layers and the low cost of GaN-on-Si, while
boosting the RF performances. We achieved harmonics H2 =-140
dBm at Pout=15 dBm, RF losses under 0.1 dB/mm at 5 GHz, and
an effective resistivity higher than 8 kΩ·cm at 5 GHz. | en_US |
| dc.description.sponsorship | REG | en_US |
| dc.format.medium | OTH | en_US |
| dc.language.iso | EN | en_US |
| dc.publisher | HEPL | en_US |
| dc.rights.uri | www.hepl.be | en_US |
| dc.subject | RF Applications | en_US |
| dc.subject | GaN | en_US |
| dc.subject | Parasitic surface conduction layer | en_US |
| dc.subject | porosification | en_US |
| dc.subject.en | Effective dielectric permittivity | en_US |
| dc.subject.en | effective resistivity | en_US |
| dc.subject.en | harmonic distortion | en_US |
| dc.subject.en | RF and microwave losses | en_US |
| dc.subject.en | porous silicon | en_US |
| dc.subject.en | GaN-on-Silicon | en_US |
| dc.subject.en | traprich | en_US |
| dc.title | GaN-on-Porous Silicon for RF Applications | en_US |
| dc.title.en | GaN-on-Porous Silicon for RF Applications | en_US |
| dc.title.fr | GaN sur silicium poreux pour les applications RF | en_US |
| dc.type | Acte de conférence ou de colloque | en_US |
| synhera.classification | Ingénierie, informatique & technologie | en_US |
| synhera.institution | HE de la Province de Liège | en_US |
| synhera.institution | CECOTEPE | en_US |
| synhera.otherinstitution | UCLouvain | en_US |
| synhera.otherinstitution | IMEC | en_US |
| synhera.otherinstitution | INCIZE | en_US |
| synhera.stakeholders.fund | WIn²WAL | en_US |
| dc.description.version | Oui | en_US |
| dc.rights.holder | HEPL - CECOTEPE | en_US |
