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Post-Process Local Porous Silicon Integration Method for RF Application

dc.rights.licenseCC0en_US
dc.contributor.authorScheen, Gilles
dc.contributor.authorTuyaerts, Romain
dc.contributor.authorNyssens, Lucas
dc.contributor.authorRack, Martin
dc.contributor.authorRasson, J
dc.contributor.authorRaskin, JP
dc.date.accessioned2025-01-23T07:24:21Z
dc.date.available2025-01-23T07:24:21Z
dc.date.issued2019-06-02
dc.identifier.urihttps://luck.synhera.be/handle/123456789/2988
dc.description.abstractProceedings de IMS 19en_US
dc.description.abstractenPost-Process Local Porous Silicon Integration Method for RF Applicationen_US
dc.description.sponsorshipREGen_US
dc.format.mediumOTHen_US
dc.language.isoNLen_US
dc.publisherHEPLen_US
dc.rights.uriwww.hepl.been_US
dc.subjectRF Applicationsen_US
dc.subjectporosificationen_US
dc.subjectGaN-on-Porousen_US
dc.subject.enEffective dielectric permittivityen_US
dc.subject.eneffective resistivityen_US
dc.subject.enharmonic distortionen_US
dc.subject.enRF and microwave lossesen_US
dc.subject.enporous siliconen_US
dc.subject.enGaN-on-Siliconen_US
dc.titlePost-Process Local Porous Silicon Integration Method for RF Applicationen_US
dc.typeAutreen_US
synhera.classificationIngénierie, informatique & technologieen_US
synhera.institutionHE de la Province de Liègeen_US
synhera.institutionCECOTEPEen_US
synhera.otherinstitutionUCLouvainen_US
synhera.stakeholders.fundWIN²WALen_US
dc.rights.holderHEPL - CECOTEPEen_US


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