dc.rights.license | OTH | en_US |
dc.contributor.author | Quenon, Alexandre | |
dc.contributor.author | DEMARBAIX, Anthonin | |
dc.contributor.author | Daubie, Evelyne | |
dc.contributor.author | Moyaert, Véronique | |
dc.contributor.author | Dualibe, Fortunato Carlos | |
dc.date.accessioned | 2022-12-13T12:53:56Z | |
dc.date.available | 2022-12-13T12:53:56Z | |
dc.date.issued | 2022-12-12 | |
dc.identifier.issn | 0018-9456 | en_US |
dc.identifier.uri | https://luck.synhera.be/handle/123456789/1704 | |
dc.identifier.doi | https://doi.org/10.1109/TIM.2022.3228260 | en_US |
dc.description.abstract | "This paper proposes a portable 3D printed test set-up allowing to realize this transient measurement while ensuring no interaction with the outside world. Moreover the setup proposes a variation of distance to favor or not the interaction of the semiconductor with the ionizing radiation source. The main advantages of the proposed 3D setup is its adaptability to any kind of radiation source geometry as well as its low encumbrance. These enable the possibility to use any local radiation source, other than accelerators, available in smaller facilities. Finally, a complete methodology is proposed to characterize the transient phenomena during the interaction of ionizing radiation with the semiconductor target, in order to validate the setup."
Extrait de l'abstract | en_US |
dc.description.sponsorship | REG | en_US |
dc.language.iso | EN | en_US |
dc.publisher | IEEE | en_US |
dc.relation.ispartof | IEEE Transactions on Instrumentation and Measurement | en_US |
dc.rights.uri | https://ieeexplore.ieee.org/Xplorehelp/author-center/publishing-policies#copyright-and-licensing-ieee-copyright-form | en_US |
dc.subject | 3D printing | en_US |
dc.subject | characterization | en_US |
dc.subject | diode | en_US |
dc.subject | ionizing radiation | en_US |
dc.subject | real-time | en_US |
dc.subject | single-event effect (SEE) | en_US |
dc.title | An Experimental Setup Based On a Printable System for the Acquisition of the Real-Time Electrical Response of Irradiated Semiconductor Devices | en_US |
dc.type | Article scientifique | en_US |
synhera.classification | Ingénierie, informatique & technologie>>Ingénierie électrique & électronique | en_US |
synhera.institution | HE Condorcet | en_US |
synhera.otherinstitution | Department of Electrical Engineering, UMons, Mons, Belgium | en_US |
synhera.otherinstitution | Physics Department, UMons, Mons, Belgium | en_US |
synhera.cost.total | / | en_US |
synhera.cost.apc | / | en_US |
synhera.cost.comp | / | en_US |
synhera.cost.acccomp | / | en_US |
dc.description.version | Oui | en_US |
dc.rights.holder | IEEE | en_US |