| dc.rights.license | OTH | en_US |
| dc.contributor.author | Dolimont, Adrien | |
| dc.contributor.author | DEMARBAIX, Anthonin | |
| dc.contributor.author | Ducobu, François | |
| dc.contributor.author | Rivière-Lorphèvre, Edouard | |
| dc.date.accessioned | 2022-12-14T08:36:49Z | |
| dc.date.available | 2022-12-14T08:36:49Z | |
| dc.date.issued | 2019-07-02 | |
| dc.identifier.issn | 0094-243X | en_US |
| dc.identifier.uri | https://luck.synhera.be/handle/123456789/1708 | |
| dc.identifier.doi | https://doi.org/10.1063/1.5112696 | en_US |
| dc.description.abstract | "The goal of this research is to analyze the impact of chemical etching on parts produced by electron beam melting. Given that the surface conditions are poor (Ra between 25 to 35 µm), an enhancement of these is asked. Dimensional and surface measurements were realized on conceived parts. Different exposure times were tested. The impact of these times on surface quality was evaluated. To help predicting the excess thickness to be provided, the dimensional impact of chemical polishing on EBM parts was estimated. 36 parts were measured before and after chemical machining. The improvement of surface quality was also evaluated after each treatment."
Extrait de l'abstract | en_US |
| dc.format.medium | OTH | en_US |
| dc.language.iso | EN | en_US |
| dc.publisher | AIP Publishing | en_US |
| dc.rights.uri | https://www.scitation.org/about | en_US |
| dc.subject | additive manufacturing | en_US |
| dc.subject | Ti6Al4V | en_US |
| dc.subject | Electron Beam Melting (EBM) | en_US |
| dc.title | Chemical etching as a finishing process for electron beam melting (EBM) parts | en_US |
| dc.type | Acte de conférence ou de colloque | en_US |
| synhera.classification | Ingénierie, informatique & technologie | en_US |
| synhera.institution | HE Condorcet | en_US |
| synhera.otherinstitution | Machine Design and Production Engineering Lab - Faculty of Engineering - UMons, Mons, Belgium | en_US |
| dc.description.version | Oui | en_US |
| dc.rights.holder | Dolimont et al. | en_US |
